Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows

Journal of Crystal Growth

Volumn 260, Issue 3-4, 2004, Pages 388-393

  Liu, J P ^a   Zhang, B S ^a   Wu, M ^a   Li, D B ^a   Zhang, J C ^a   Jin, R Q ^a   Zhu, J J ^a   Chen, J ^a   Wang, J F ^a   Wang, Y T ^a   Yang, H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Atomic force microscopy; A1. Triple axis X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. AlInGaN Quaternary alloys

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPRESSIVE STRESS; GROWTH (MATERIALS); LATTICE CONSTANTS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE QUALITY; EMISSION INTENSITY; GROWTH RATE; LATTICE MISMATCH;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0344308444     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.09.007     Document Type: Article

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