On the profile of temperature dependent electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures at various frequencies

Physica B: Condensed Matter

Volumn 404, Issue 21, 2009, Pages 4221-4224

  Gokcen M ^a   Altuntas H ^b  

^a DUZCE UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

Au SiO2 n GaAs structures; Dielectric properties; Electric modulus; Frequency effect; Series resistance; Temperature effect

Indexed keywords

AU/SIO2/N-GAAS STRUCTURES; ELECTRIC MODULUS; FREQUENCY EFFECT; GAAS; SERIES RESISTANCES;

CERAMIC CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC LOSSES; ELECTRIC PROPERTIES; GALLIUM ALLOYS; SEMICONDUCTING GALLIUM; TANNING; TEMPERATURE;

THERMAL EFFECTS;

EID: 71149109318     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.023     Document Type: Article

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