6 nm half-pitch lines and 0.04 νm 2 static random access memory patterns by nanoimprint lithography

Nanotechnology

Volumn 16, Issue 8, 2005, Pages 1058-1061

  Austin, Michael D ^a,b   Zhang, Wei ^a,b   Ge, Haixiong ^a,b   Wasserman, D ^a   Lyon, S A ^a   Chou, Stephen Y ^a,b  

^a Princeton University   (United States)

^b Nanostructure Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL DIMENSION CONTROL; HALF-PITCH GRATINGS; MASS PRODUCTION; NANOIMPRINT LITHOGRAPHY (NIL);

ALUMINUM COMPOUNDS; ELECTRON BEAM LITHOGRAPHY; LARGE SCALE SYSTEMS; METALS; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; POLYSTYRENES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON COMPOUNDS; SUPERLATTICES;

STATIC RANDOM ACCESS STORAGE;

EID: 21144432461     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/8/010     Document Type: Article

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