Nanoimprint for future non-volatile memory and logic devices

Microelectronic Engineering

Volumn 85, Issue 5-6, 2008, Pages 870-872

  Meier, M ^a   Nauenheim, C ^a   Gilles, S ^a   Mayer, D ^a   Kugeler C ^a   Waser, R ^a,b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Crossbar array; Memory and logic devices; Nanoimprint lithography

Indexed keywords

LOGIC DEVICES; MICROARRAYS; NONVOLATILE STORAGE; SPIN DYNAMICS;

CROSSBAR ARRAYS; MEMORY AND LOGIC DEVICES; NANOELECTRODES;

NANOIMPRINT LITHOGRAPHY;

BUFFER STORAGE; LITHOGRAPHY; LOGIC;

EID: 44149128690     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.01.101     Document Type: Article

References (8)

1. Chou S.Y., et al. J. Vac. Sci. Technol. B 14 6 (1996) 4129-4133
2. Jung G.-Y., et al. Nanoletters 4 (2004) 1225-1229
3. Wu W., et al. Appl. Phys. A 80 (2005) 1173-1178
4. Jung G.-Y., et al. Nanoletters 6 (2006) 351-354
5. Austin M.D., et al. Nanotechnology 16 (2005) 1058-1061
6. Austin M.D., et al. Appl. Phys. Lett. 84 (2004) 5299-5301
7. Green J.E., et al. Nature 445 (2007) 414-417
8. Gao H., et al. Nanoletters 6 (2006) 2438-2441