Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl2 helicon-wave plasma

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 2, 2001, Pages 455-459

  Chiu, H K ^a   Lin, T L ^a   Hu, Y ^a   Leou, K C ^a   Lin, H C ^b   Tsai, M S ^b   Huang, T Y ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; EMISSION SPECTROSCOPY; NITROGEN; OPTICAL MICROSCOPY; PLASMA ETCHING; PRESSURE EFFECTS; SILICA;

BIAS POWER; HELICON WAVE PLASMA; OPTICAL EMISSION SPECTROSCOPY;

TITANIUM NITRIDE;

EID: 0035272976     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1342866     Document Type: Article

References (17)