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Volumn 606, Issue 13-14, 2012, Pages 1093-1099

Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

(7) Monier, G a,b Bideux, L a,b Robert Goumet, C a,b Gruzza, B a,b Petit, M b,c Labar J L d Menyhard M d

a UNIVERSITÉ CLERMONT AUVERGNE (France)

b CNRS (France)

c AIX MARSEILLE UNIVERSITÉ (France)

d RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

Author keywords

AFM; Cubic GaN; GaAs; GDS plasma source; Nitridation; TEM; XPS

Indexed keywords

AFM; AIR EXPOSURE; AMORPHOUS GAN; CUBIC GAN; CUBIC STRUCTURE; GAAS; GAAS SURFACES; GAAS(001); GAN LAYERS; HIGH QUALITY; LOW POWER; LOW PRESSURES; NITRIDE LAYERS; NITROGEN SPECIES; PLASMA EXPOSURE TIME; STRUCTURE CHANGE; SURFACE OXIDATIONS;

GALLIUM ARSENIDE; GLOW DISCHARGES; IONIZATION OF GASES; NITRIDATION; NITROGEN PLASMA; PASSIVATION; PLASMA SOURCES; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 84860726172 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2012.03.006 Document Type: Article

Times cited : (29)

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