Passivation of GaAs surface by ultrathin epitaxial GaN layer

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 621-626

  Riikonen, J ^a   Sormunen, J ^a   Koskenvaara, H ^a   Mattila, M ^a   Sopanen, M ^a   Lipsanen, H ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; Al. Photoluminescence; B2. Semiconducting gallium compounds

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

GAAS; GAN LAYERS; LOW-DIMENSIONAL STRUCTURES; NITROGEN SOURCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 9944261285     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.110     Document Type: Conference Paper

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