Nanoscale EELS analysis of dielectric function and bandgap properties in GaN and related materials

Micron

Volumn 31, Issue 4, 2000, Pages 435-440

  Brockt, G ^a   Lakner, H ^b  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b FRAUNHOFER INSTITUTE FOR PHOTONIC MICROSYSTEMS   (Germany)

Author keywords

AlN; Dielectric function; Electron energy loss spectroscopy; GaN; Reflectivity; Scanning transmission electron microscope

Indexed keywords

EID: 0034103159     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0968-4328(99)00121-3     Document Type: Article

References (12)

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