XPS study of the formation of ultrathin GaN film on GaAs(1 0 0)

Applied Surface Science

Volumn 254, Issue 13, 2008, Pages 4150-4153

  Bideux, L ^a   Monier, G ^a   Matolin, V ^b   Robert Goumet, C ^a   Gruzza, B ^a  

^a UNIVERSITÉ BLAISE PASCAL   (France)

^b CHARLES UNIVERSITY   (Czech Republic)

Author keywords

Gallium arsenide; Gallium nitride; Heterojunctions; Semiconductor semiconductor thin film structure; XPS

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; NITRIDATION; SEMICONDUCTING GALLIUM ARSENIDE;

ATOMIC SPECIES; GLOW DISCHARGE; SURFACE SENSITIVE TECHNIQUES;

ULTRATHIN FILMS;

EID: 41749117910     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.12.058     Document Type: Article

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