The inelastic mean free path and the inelastic scattering cross-section of electrons in GaAs determined from highly resolved electron energy spectra

Surface Science

Volumn 402-404, Issue , 1998, Pages 491-495

  Krawczyk, M ^a   Jablonski, A ^a   Tougaard, S ^b   Toth, J ^c   Varga, D ^c   Gergely, G ^d  

^a INSTITUTE OF PHYSICAL CHEMISTRY   (Poland)

^b UNIVERSITY OF SOUTHERN DENMARK   (Denmark)

^c INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^d RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Amorphous surfaces; Elastic peak electron spectroscopy; Electron energy loss spectroscopy; Electron inelastic mean free path; Gallium arsenide; Inelastic electron scattering cross section; Monte Carlo simulation

Indexed keywords

AMORPHOUS MATERIALS; COMPUTER SIMULATION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; MONTE CARLO METHODS;

ELASTIC PEAK ELECTRON SPECTROSCOPY; INELASTIC MEAN FREE PATH (IMFP); TOUGAARD PROCEDURE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031639293     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00939-4     Document Type: Article

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