Nitridation of GaAs surfaces stimulated by nitrogen glow discharge

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 468-471

  Xu, Q J ^a   Ding, X M ^a   Hou, X Y ^a   Wang, Xun ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; GALLIUM COMPOUNDS; GLOW DISCHARGES; NITRIDES; NITRIDING; NITROGEN; PHOTOEMISSION; SURFACE PROPERTIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030233979     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00188-2     Document Type: Article

References (10)

1. S. Yoshida, M. Sasaki and H. Kawanishi, J. Cryst. Growth 136 (1994) 37.
2. S. Strite, J. Ruan, Z. Li, A. Salvador, H. Chen, D.J. Smith, W.J. Choyke and H. Morkoc, J. Vac. Sci. Technol. B 9 (1991) 1924.
3. H. Okumura, S. Misawa and S. Yoshida, Appl. Phys. Lett. 59 (1991) 1058.
4. Z.Q. He, X.M. Ding, X.Y. Hou and X. Wang, Appl. Phys. Lett. 64 (1994) 315.
5. X.Y. Zhou, M. Wolf and J.M. White, J. Vac. Sci. Technol. A 11 (1993) 838.
6. Y. Bu and M.C. Lin, Surf. Sci. 317 (1994) 152.
7. Y.B. Xu, G.S. Dong, X.M. Ding, S. Yang and X. Wang, Chin. Phys. 4 (1984) 189.
8. N.K. Singh, A.T. Murrell and J.S. Foord, Surf. Sci. 274 (1992) 341.
9. D.K. Biegelsen, R.D. Bringans, J.E. Northrup and L.E. Swartz, Phys. Rev. B 41 (1990) 5701.
10. T.C. Chiang, J.A. Knapp, M. Aono and D.E. Eastman, Phys. Rev. B 21 (1980) 3513.