Passivation of ZnO TFTs

Journal of the Society for Information Display

Volumn 18, Issue 10, 2010, Pages 753-761

  Mourey, Devin A ^a   Burberry, Mitchell S ^b   Zhao, Dalong A ^a   Li, Yuanyuan V ^a   Nelson, Shelby F ^b   Tutt, Lee ^b   Pawlik, Thomas D ^b   Levy, David H ^b   Jackson, Thomas N ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b EASTMAN KODAK COMPANY   (United States)

Author keywords

Oxide semiconductor; Passivation; Stability; Thin film transistor; ZnO

Indexed keywords

BACK CHANNELS; BIAS STRESS; BULK DOPING; DETRIMENTAL EFFECTS; DEVICE STABILITY; OXIDE SEMICONDUCTOR; PASSIVATION PROCESS; POLYCRYSTALLINE METALS; SUBTHRESHOLD SLOPE; ZNO; ZNO DEVICES;

GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HYDROGEN PEROXIDE; SEMICONDUCTING ORGANIC COMPOUNDS; STABILITY; SURFACE TREATMENT; THIN FILM TRANSISTORS; TRANSPORT PROPERTIES; ZINC OXIDE;

PASSIVATION;

EID: 77958171690     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/JSID18.10.753     Document Type: Article

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