Nanocrystalline ZnO microwave thin film transistors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7679, Issue , 2010, Pages

  Bayraktaroglu, Burhan ^a   Leedy, Kevin ^a   Neidhard, Robert ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

atomic layer deposition; FET; Nanocrystalline; pulsed lased deposition; thin films; ZnO

Indexed keywords

AMORPHOUS SI; CURRENT GAINS; CUT-OFF; DEVICE LAYOUT; FET; FIELD-EFFECT MOBILITIES; FIGURE OF MERIT; GATE INSULATOR; GATE LENGTH; LOW-SPEED APPLICATIONS; MICROWAVE APPLICATIONS; NANOCRYSTALLINE ZNO; NANOCRYSTALLINES; ON/OFF RATIO; ORGANIC THIN FILM TRANSISTORS; POWER GAINS; PULSED LASED DEPOSITION; SINGLE-CRYSTAL TRANSISTORS; ZNO;

AMORPHOUS FILMS; AMORPHOUS SILICON; ATOMIC LAYER DEPOSITION; DEPOSITION; FILM GROWTH; MESFET DEVICES; NANOTECHNOLOGY; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SILICON WAFERS; SINGLE CRYSTALS; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 79953740917     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.849666     Document Type: Conference Paper

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