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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 9, 2008, Pages 2963-2965

M-plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c-plane patterned templates

(7) Schaake, Christopher A a Fichtenbaum, Nicholas A a Neufeld, Carl J a Keller, Stacia a Denbaars, Steven P a Speck, James S a Mishra, Umesh K a

a Santa Barbara (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALN; CONVENTIONAL METHODS; INGAN QUANTUM WELLS; INGAN/GAN; LATERAL GROWTH; M-PLANE; METAL CONTACTS; MOCVD; ON-WAFER; P-TYPE; PEAK WAVELENGTH; PLANE SURFACES; QUANTUM WELL; RECTIFYING BEHAVIORS; VICINAL SAPPHIRE;

CHEMICAL VAPOR DEPOSITION; DISTILLATION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; PHYSICAL OPTICS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; WATER ANALYSIS;

LIGHT EMITTING DIODES;

EID: 77951279516 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200779284 Document Type: Conference Paper

Times cited : (2)

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