Gradient doping of Mg in p-type GaN for high efficiency InGaN-GaN ultraviolet light-emitting diode

IEEE Photonics Technology Letters

Volumn 19, Issue 23, 2007, Pages 1880-1882

  Kwon, Min Ki ^a   Park, Il Kyu ^a   Kim, Ja Yeon ^a   Kim, Jeom Oh ^a   Kim, Bongjin ^b   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b NINEX Co Ltd   (South Korea)

Author keywords

(In)GaN; Doping; Gallium nitride; Light emitting diodes; Light emitting diode (LED); Near ultraviolet (UV); Quantum well devices; Temperature distribution

Indexed keywords

LIGHT EMISSION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION;

GRADIENT DOPING; NEAR ULTRAVIOLET; OPTICAL OUTPUT POWER;

LIGHT EMITTING DIODES;

EID: 38049141296     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.908659     Document Type: Article

References (14)

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