Capacitance Spectroscopy of Thin-Film Solar Cells

Advanced Characterization Techniques for Thin Film Solar Cells

Volumn , Issue , 2011, Pages 81-105

  Heath, Jennifer ^a   Zabierowski, Pawel ^b  

^a LINFIELD COLLEGE   (United States)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Debye screening length; Deep level transient spectroscopy (dlts); Drive level capacitance profiling (DLCP); Phasor diagram; Photocapacitance; Thin film semiconductors

Indexed keywords

EID: 84859989938     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527636280.ch4     Document Type: Chapter

References (75)

1. Feichtinger, H. (1991) Deep centers in semiconductors, in Electronic Structure and Properties of Semiconductors (ed. W. Schröter), VCH Publishers, New York, pp. 143-195.
2. Losee, D.L. (1975) Admittance spectroscopy of impurity levels in Schottky barriers. J. Appl. Phys., 46, 2204.
3. Lang, D.V., Cohen, J.D., and Harbison, J.P. (1982) Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy. Phys. Rev. B, 25, 5285.
4. Cohen, J.D. and Lang, D.V. (1982) Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states. Phys. Rev. B, 25, 5321.
5. Blood, P. and Orton, J.W. (1992) The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Academic Press, San Diego.
6. Schroeder, D.K. (2006) Semiconductor Material and Device Characterization, John Wiley and Sons, Inc., Hoboken, NJ.
7. Jonscher, A.K. (1983) Dielectric Relaxation in Solids, Chelsea Dielectrics Press, Ltd, Chelsea.
8. Nicollian, E.H. and Brews, J.R. (1982) MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley, New York, USA.
9. Istratov, A.A. and Vyvenko, O.F. (1999) Exponential analysis in physical phenomena. Rev. Sci. Instrum., 70, 1233.
10. Callegaro, L. (2009) The metrology of electrical impedance at high frequency: A review. Meas. Sci. Technol., 20, 022002.
11. Sze, S.M. (1985) Semiconductor Devices Physics and Technology, John Wiley & Sons, Inc., New York.
12. Hilibrand, J. and Gold, R.D. (1960) Determination of the impurity distribution in junction diodes from capacitance-voltage measurements. RCA Rev., 21, 245.
13. Johnson, W.C. and Panousis, P.T. (1971) The influence of Debye length on the C-V measurement of doping profiles. IEEE Trans. Electron. Devices, ED-18, 965.
14. Crandall, R.S. (1980) Trap spectroscopy of a-Si:H diodes using transient current techniques. J. Electron. Mater., 9, 713.
15. Young, D.L. and Crandall, R.S. (2005) Strongly temperature-dependent free energy barriers measured in a polycrystalline semiconductor. Appl. Phys. Lett., 86, 262107.
16. Branz, H.M. (1988) Charge-trapping model of metastability in doped hydrogenated amorphous silicon. Phys. Rev. B, 38, 7475.
17. Branz, H.M. and Crandall, R.S. (1989) Ionization entropy and charge-statecontrolled metastable defects in semiconductors. Appl. Phys. Lett., 55, 2634.
18. Los, A.V. and Mazzola, M.S. (2001) Semiconductor impurity parameter determination from Schottky junction thermal admittance spectroscopy. J. Appl. Phys., 89, 3999.
19. Los, A.V. and Mazzola, M.S. (2002) Model of Schottky junction admittance taking into account incomplete impurity ionization and large signal effects. Phys. Rev. B, 65, 165319.
20. Burgelman, M., Nollet, P., and Degrave, S. (2000) Modelling polycrystalline semiconductor solar cells. Thin Solid Films, 361-362, 527.
21. Ćwil, M., Igalson, M.,Zabierowski, P., and Siebentritt, S. (2008) Charge and doping distributions by capacitance profiling in Cu(In,Ga)Se2 solar cells. J. Appl. Phys., 103, 063701.
22. Kimmerling, L.C. (1974) Influence of deep traps on the measurement of free-carrier distributions in semiconductors by junction capacitance techniques. J. Appl. Phys., 45, 1839.
23. Heath, J.T., Cohen, J.D., and Shafarman, W.N. (2004) Bulk and metastable defects in CuIn1_xGaxSe2 thin films using drivelevel capacitance profiling. J. Appl. Phys., 95, 1000.
24. Lang, D.V. (1974) Deep-level transient spectroscopy: A new method to characterize traps in semiconductors. J. Appl. Phys., 45, 3023.
25. Johnston, S.W., Kurtz, S., Friedman, D.J., Ptak, A.J., Ahrenkiel, R.K., and Crandall, R.S. (2005) Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy. Appl. Phys. Lett., 86, 072109.
26. Kurtz, S., Johnston, S., and Branz, H.M. (2005) Capacitance-spectroscopy identification of a key defect in Ndegraded GaInNAs solar cells. Appl. Phys. Lett., 86, 113506.
27. Kukimoto, H., Henry, C.H., and Merritt, F.R. (1973) Photocapacitance studies of the oxygen donor in GaP. I. Optical crosssections, energy levels, and concentration. Phys. Rev. B, 7, 2486.
28. Murray, F., Carìn, R., and Bogdanski, P. (1986) Determination of high-density interface state parameters in metalinsulator-semiconductor structures by deep-level transient spectroscopy. J. Appl. Phys., 60, 3592.
29. Zabierowski, P. Electrical characterization of CIGSe-based thin film photovoltaic devices, in Thin Film Solar Cells: Current Status and Future Trends (eds A. Romeo and A. Bossio), Nova Science Publishers, Hauppauge, NY.
30. For an example of an exception, see: Grillot, P.N., Ringel, S.A., Fitzgerald, E.A., Watson, G.P., Xie, Y.H. (1995) Minorityand majority-carrier trapping in strainrelaxed Ge0.3Si0.7/Si heterostructure diodes grown by rapid thermal chemical-vapor deposition. J. Appl. Phys., 77, 676.
31. Look, D.C. and Sizelove, J.R. (1995) Depletion width and capacitance transient formulas for deep traps of high concentration. J. Appl. Phys., 78, 2848.
32. Buchwald, W.R., Morath, C.P., and Drevinsky, P.J. (2007) Effects of deep defect concentration on junction space charge capacitance measurements. J. Appl. Phys., 101, 094503.
33. Frenkel, J. (1938) On pre-breakdown phenomena in insulators and electronic semiconductors. Phys. Rev., 54, 647.
34. Vincent, G., Chantre, A., and Bois, D. (1979) Electric field effect on the thermal emission of traps in semiconductor junctions. J. Appl. Phys., 50, 5484.
35. Li, G.P. and and Wang, K.L. (1985) Detection sensitivity and spatial resolution of reverse-bias pulsed deep-level transient spectroscopy for studying electric fieldenhanced carrier emission. J. Appl. Phys., 57, 1016.
36. Dobaczewski, L., Peaker, A.R., and Bonde Nielsen, K. (2004) Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors. J. Appl. Phys., 96, 4689.
37. Zabierowski, P. and Edoff, M. (2005) Laplace-DLTS analysis of the minority carrier traps in the Cu(In,Ga)Se2-based solar cells. Thin Solid Films, 480-481, 301.
38. Walter, T., Herberholz, R., Müller, C., and Schock, H.W. (1996) Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctions. J. Appl. Phys., 80, 4411.
39. Lee, J.W., Cohen, J.D., and Shafarman, W.N. (2005) The determination of carrier mobilities in CIGS photovoltaic devices using high-frequency admittance measurements. Thin Solid Films, 480, 336.
40. Dhariwal, S.R. and Deoraj, B.M. (1992) Contribution of bulk states to the depletion layer admittance. Solid State Electron., 36, 1165.
41. Leön, C., Martin, J.M., Santamaría, J., Skarp, J., González-Díaz, G., and Sánchez-Quesada, F. (1996) Use of Kramers-Kronig transforms for the treatment of admittance spectroscopy data of p-n junctions containing traps. J. Appl. Phys., 79, 7830.
42. Milton, G.W., Eyre, D.J., andMantese, J.V. (1997) Finite frequency range Kramers-Kronig relations: Bounds on the dispersion. Phys. Rev. Lett., 79, 3062.
43. van de Leur, R.H.M. (1991) A critical consideration on the interpretation of impedance plots. J. Phys. DAppl. Phys., 24, 1430.
44. Michelson, C.E.,Gelatos, A.V., and Cohen, J.D. (1985) Drive-level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films. Appl. Phys. Lett., 47, 412.
45. Unold, T. and Cohen, J.D. (1991) Enhancement of light-induced degredation in hydrogenated amorphous silicon due to carbon impurities. Appl. Phys. Lett., 58, 723.
46. Johnson, P.K., Heath, J.T., Cohen, J.D., Ramanathan, K., and Sites, J.R. (2005) A comparative study of defect states in selenized and evaporated CIGS(S) solar cells. Prog. Photovoltaics, 13, 1.
47. Chantre, A., Vincent, G., and Bois, D. (1981) Deep-level optical spectroscopy in GaAs. Phys. Rev. B, 23, 5335.
48. Cohen, J.D. and Gelatos, A.V. (1988) Transient photocapacitance studies of deep defect transitions in hydrogenated amorphous silicon, in Amorphous Silicon and Related Materials Vol. A (ed. H. Fritzsche), World Scientific Publishing, Singapore, pp. 475-512.
49. Lang, D. (1992) DX centers in III-V alloys, in Deep Centers in Semiconductors A Stateof-the-Art Approach, 2nd edn (ed. S.T. Pantelides), Gordon and Breach Science Publishers, Yverdon, Switzerland, pp. 592-665.
50. Heath, J.T., Cohen, J.D., Shafarman,W.N., Liao, D.X., and Rockett, A.A. (2002) Effect of Ga content on defect states in CuIn1_xGaxSe2 photovoltaic devices. Appl. Phys. Lett., 80, 4540.
51. Erslev, P.T., Lee, J.W., Shafarman, W.N., and Cohen, J.D. (2009) The influence of Na on metastable defect kinetics in CIGS devices. Thin Solid Films, 517, 2277.
52. Cohen, J.D., Unold, T., Gelatos, A.V., and Fortmann, C.M. (1992) Deep defect structure and carrier dynamics in amorphous silicon and silicon- germanium alloys determined by transient photocapacitance methods. J. Non-Cryst. Solids, 141, 142.
53. Meyer, W. and Neldel, H. (1937) Über die Beziehungen zwischen der Energiekonstanten und der Mengenkonstanten a in der Leitwerts-Temperaturformel bei oxydischen Halbleitern. Zeitschrift für technische Physik, 12, 588.
54. Street, R.A. (1991) Hydrogenated Amorphous Silicon, Cambridge University Press, Cambridge, p. 224.
55. Crandall, R.S. (1990) Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect. Phys. Rev. B, 43, 4057.
56. Herberholz, R., Walter, T., Müller, C., Friedlmeier, T., Schock, H.W., Saad, M., Lux-Steiner, M.Ch., and Albertz, V. (1996) Meyer-Neldel behavior of deep level parameters in heterojunctions to Cu(In, Ga)(S,Se)2. Appl. Phys. Lett., 69, 2888.
57. Leffler, J.E. (1955) The enthalpy-entropy relationship and its implications for organic chemistry. J. Org. Chem., 20, 1202.
58. Glasstone, S., Laidler, K.J., and Eyring, H. (1941) The Theory of Rate Processes, McGraw-Hill, New York.
59. Almbladh, C.O. and Reese, G.J. (1982) Statistical mechanics of electronic energy levels in semiconductors. Solid State Commun., 41, 173.
60. Engström, O. and Alm, A. (1978) Thermodynamical analysis of optimal recombination centers in thyristors. Solid State Electron., 21, 1571.
61. Yelon, A. and Movaghar, B. (1990) Microscopic explanation of the compensation (Meyer-Neldel) rule. Phys. Rev. Lett., 65, 618.
62. Yelon, A., Movaghar, B., and Branz, H.M. (1992) Origin and consequences of the compensation (Meyer-Neldel) law. Phys. Rev. B, 46, 12244.
63. Viščor, P. (2002) Comment on.Origin and consequences of the compensation (Meyer-Neldel) law.. Phys. Rev. B, 65, 077201.
64. Yelon, A. and Movaghar, B. (2002) Reply to.Comment on.Origin and consequences of the compensation (Meyer-Neldel) law... Phys. Rev. B, 65, 077202.
65. Widenhorn, R., Rest, A., and Bodegom, E. (2002) The Meyer-Neldel rule for a property determined by two transport mechanisms. J. Appl. Phys., 91, 6524.
66. Popescu, C. and Stoica, T. (1992) Meyer-Neldel correlation in semiconductors and Mott.s minimum metallic conductivity. Phys. Rev. B, 46, 15063.
67. Niemegers, A., Burgelman, M., Herberholz, R., Rau, U.,Hariskos, D., and Schock, H.W. (1998) Model for electronic transport in Cu(In,Ga)Se2 solar cells. Progr. Photovoltaics: Res. Appl., 6, 407.
68. Eisenbarth, T., Unold, T., Caballero, R., Kaufmann, C.A., and Schock, H.-W. (2010) Interpretation of admittance, capacitance-voltage, and current- voltage signatures in Cu(In,Ga)Se2 thin film solar cells. J. Appl. Phys., 107, 034509.
69. Niemegeers, A. and Burgelman, M. (1997) Effects of the Au/CdTe back contact on IV and CV characteristics of Au/CdTe/ CdS/TCO solar cells. J. Appl. Phys., 81, 2881.
70. Demtsu, S.H. and Sites, J.R. (2006) Effect of back-contact barrier on thin-film CdTe solar cells. Thin Solid Films, 510, 320.
71. Macdonald, D., Rougieux, F., Cuevas, A., Lim, B., Schmidt, J., Di Sabatino, M., and Geerligs, L.J. (2009) Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon. J. Appl. Phys., 105, 093704.
72. Nadazdy, V. and Zeman, M. (2004) Origin of charged gap states in a-Si:H and their evolution during light soaking. Phys. Rev. B, 69, 165213.
73. Shimizu, T. (2004) Staebler-Wronski effect in hydrogenated amorphous silicon and related alloy films. Jpn. J. Appl. Phys., 43, 3257.
74. Balcioglu, A., Ahrenkiel, R.K., and Hasoon, F. (2000) Deep-level impurities in CdTe/CdS thin-film solar cells. J. Appl. Phys., 88, 7176.
75. Demtsu, S.H., Albin, D.S., Pankow, J.W., and Davies, A. (2006) Stability study of CdS/CdTe solar cells made with Ag and Ni back-contacts. Sol. Energy Mater. Sol. C, 90, 2934.