Effects of deep defect concentration on junction space charge capacitance measurements

Journal of Applied Physics

Volumn 101, Issue 9, 2007, Pages

  Buchwald, Walter R ^a   Morath, Christian P ^b   Drevinsky, Peter J ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC SPACE CHARGE; MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS;

DEEP DEFECTS; SIGNAL CAPACITANCE; SPACE CHARGE CAPACITANCE; TRANSIENT CAPACITANCE;

DEFECT DENSITY;

EID: 34248523569     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2719291     Document Type: Conference Paper

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