Semiconductor impurity parameter determination from Schottky junction thermal admittance spectroscopy

Journal of Applied Physics

Volumn 89, Issue 7, 2001, Pages 3999-4003

  Los, Andrei V ^a   Mazzola, Michael S ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035310069     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1352679     Document Type: Article

References (23)

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