Effect of Ga content on defect states in CuIn1-xGa xSe2 photovoltaic devices

Applied Physics Letters

Volumn 80, Issue 24, 2002, Pages 4540-4542

  Heath, J T ^a   Cohen, J D ^a   Shafarman, W N ^b   Liao, D X ^c   Rockett, A A ^c  

^a UNIVERSITY OF OREGON   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

^c United States of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TAIL; DEFECT BANDS; DEFECT STATE; DEVICE EFFICIENCY; EXPONENTIAL DISTRIBUTIONS; GA CONTENT; PHOTOVOLTAIC DEVICES; RECOMBINATION CENTERS; TRANSIENT PHOTOCAPACITANCE SPECTROSCOPIES; VALENCE BAND EDGES;

DEFECTS; PHOTOVOLTAIC EFFECTS;

GALLIUM;

EID: 79956020457     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1485301     Document Type: Article

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14. e determined in this manner reflect the lesser of the deep trapping time and the recombination time. Thus, the stated value should be regarded as a lower limit.