Laplace-DLTS analysis of the minority carrier traps in the Cu(In,Ga)Se 2-based solar cells

Thin Solid Films

Volumn 480-481, Issue , 2005, Pages 301-306

  Zabierowski, P ^a   Edoff, M ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

Cu(In,Ga)Se2; Defect layer; Interface states; Laplace DLTS; Metastabilities

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; COPPER COMPOUNDS; ELECTRIC FIELDS; ELECTRON TRAPS; ELECTRON TUNNELING; LAPLACE TRANSFORMS; LIGHTING; SOLAR CELLS; SPECTROSCOPIC ANALYSIS; TERNARY SYSTEMS;

CU(IN,GA)SE2; DEFECT LAYER; INTERFACE STATES; LAPLACE-DEEP LEVEL TRANSIENT SPECTROSCOPY (LAPLACE-DLTS); METASTABILITIES;

THIN FILMS;

EID: 18444375015     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.005     Document Type: Conference Paper

References (20)

1. M. Igalson, and P. Zabierowski Thin Solid Films 361-362 2000 371
2. R. Herberholz, M. Igalson, and H.-W. Schock J. Appl. Phys. 83 1998 318
3. M. Igalson, and L. Stolt Proc. 14th Eur. Photovoltaic Sol. Energy Conf., Barcelona 1997 2153
4. A. Niemegeers, M. Burgelman, R. Herberholz, U. Rau, D. Hariskos, and H.-W. Schock Prog. Photovolt. 6 1998 407
5. U. Rau, D. Braunger, R. Herberholz, H.-W. Schock, J.F. Guillemoles, L. Kronik, and D. Cahen J. Appl. Phys. 86 1999 497
6. A. Niemegeers, S. Gillis, and M. Burgelman J. Schmid H.A. Ossenbrink P. Helm H. Ehmann E.D. Dunlop Proc. 2nd Worls Conf Solar Energy Conv. (Vienna) 1998 E.C. Joint Res. Centre Luxembourg 1071
7. J.T. Heath, J.D. Cohen, and W.N. Shafarman J. Appl. Phys. 95 2004 1000
8. M. Igalson, M. Edoff, Thin Solid Films, (this issue).
9. P. Zabierowski, and M. Igalson Thin Solid Films 361-362 2000 268
10. P. Zabierowski, M. Igalson, and H.-W. Schock Polycryst. Semicond. V, Solid State Phenom. 67-68 1998 403
11. P. Zabierowski, U. Rau, and M. Igalson Thin Solid Films 387 2001 147
12. J. Kessler, M. Bodegard, J. Hedstrom, and L. Stolt Sol. Energy Mater. Sol. Cells 67 2001 67
13. S.W. Provencher Comput. Phys. Commun. 27 1982 229
14. L. Dobaczewski, P. Kaczor, I.D. Hawkins, and A.R. Peaker J. Appl. Phys. 76 1994 194
15. G.P. Li, and K.L. Wang J. Appl. Phys. 57 1985 1016
16. P. Zabierowski, (in press).
17. G. Vincent, A. Chantre, and D. Bois J. Appl. Phys. 50 1979 5484
18. G.A.M. Hurx, D.B.M. Klaassen, and M.P.G. Knuvers IEEE Trans. Electron Devices 39 1992 331
19. S.B Zhang, S.-H. Wei, A. Zunger, and H. Katayama-Yoshida Phys. Rev., B 57 1998 9642
20. S.-H. Wei, S.B Zhang, and A. Zunger J. Appl. Phys. 85 1999 7214