Observed trapping of minority-carrier electrons in p -type GaAsN during deep-level transient spectroscopy measurement

Applied Physics Letters

Volumn 86, Issue 7, 2005, Pages 1-3

  Johnston, S W ^a   Kurtz, S R ^a   Friedman, D J ^a   Ptak, A J ^a   Ahrenkiel, R K ^a   Crandall, R S ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALGORITHMS; ELECTRON TRAPS; FERMI LEVEL; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; THERMIONIC EMISSION; X RAY DIFFRACTION ANALYSIS;

CARRIER EXCITATION; DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS); ELECTRON CONCENTRATIONS; MINORITY-CARRIER ELECTRONS;

SCHOTTKY BARRIER DIODES;

EID: 17144416120     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1865328     Document Type: Article

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