-
2
-
-
0032492884
-
Room-temperature transistor based on a single carbon nanotube
-
S. Tans, A. Verschueren, and C. Dekker Room-temperature transistor based on a single carbon nanotube Nature (London) 393 1998 49 51
-
(1998)
Nature (London)
, vol.393
, pp. 49-51
-
-
Tans, S.1
Verschueren, A.2
Dekker, C.3
-
3
-
-
0342819025
-
Helical microtubules of graphitic carbon
-
S. Ijima Helical microtubules of graphitic carbon Nature 354 1991 56 58
-
(1991)
Nature
, vol.354
, pp. 56-58
-
-
Ijima, S.1
-
4
-
-
21644481982
-
Carbon nanotube electronics and optoelectronics
-
P. Avouris, A. Afzali, J. Appenzeller, J. Chen, M. Freitag, C. Klinke, Y.-M. Lin, and J.C. Tang Carbon nanotube electronics and optoelectronics IEDM Tech. Dig. 2004 525 529
-
(2004)
IEDM Tech. Dig.
, pp. 525-529
-
-
Avouris, P.1
Afzali, A.2
Appenzeller, J.3
Chen, J.4
Freitag, M.5
Klinke, C.6
Lin, Y.-M.7
Tang, J.C.8
-
5
-
-
79960379226
-
LDC-CNTFET: A carbon nanotube field effect transistor with linear doping profile channel
-
Ali. Naderi, Parviz. Keshavarzi, and Ali.A. Orouji LDC-CNTFET: A carbon nanotube field effect transistor with linear doping profile channel Superlattices Microstruct. 50 2011 145 156
-
(2011)
Superlattices Microstruct.
, vol.50
, pp. 145-156
-
-
Naderi, A.1
Keshavarzi, P.2
Orouji, A.A.3
-
6
-
-
2142649257
-
High-field, quasi-ballistic transport in short carbon nanotubes
-
A. Javey, J. Guo, Q. Wang, D. Mann, M. Lundstrom, and H. Dai High-field, quasi-ballistic transport in short carbon nanotubes Phys. Rev. Lett. 92 2004
-
(2004)
Phys. Rev. Lett.
, vol.92
-
-
Javey, A.1
Guo, J.2
Wang, Q.3
Mann, D.4
Lundstrom, M.5
Dai, H.6
-
8
-
-
67249089499
-
P-channel, n-channel and ambipolar field-effect transistors based on functionalized carbon nanotube networks
-
R.G.S. Goh, J.M. Bell, N. Motta, P.K. Ho, and E.R. Waclawik P-channel, n-channel and ambipolar field-effect transistors based on functionalized carbon nanotube networks Superlattices Microstruct. 46 2009 347 356
-
(2009)
Superlattices Microstruct.
, vol.46
, pp. 347-356
-
-
Goh, R.G.S.1
Bell, J.M.2
Motta, N.3
Ho, P.K.4
Waclawik, E.R.5
-
9
-
-
27744533006
-
High-performance dual-gate carbon nanotube FETs with 40-nm gate length
-
Y.M. Lin, J. Appenzeller, Zh. Chen, Zh.G. Chen, H.M. Cheng, and P. Avouris High-performance dual-gate carbon nanotube FETs with 40-nm gate length IEEE Electron Device Lett. 26 2005
-
(2005)
IEEE Electron Device Lett.
, vol.26
-
-
Lin, Y.M.1
Appenzeller, J.2
Chen, Zh.3
Chen, Zh.G.4
Cheng, H.M.5
Avouris, P.6
-
11
-
-
1642487759
-
Carbon nanotube field-effect transistors with integrated ohmic contacts and high-k gate dielectrics
-
A. Javey, J. Guo, D.B. Farmer, Q. Wang, D. Wang, R.G. Gordon, M. Lundstrom, and H. Dai Carbon nanotube field-effect transistors with integrated ohmic contacts and high-k gate dielectrics Nano Lett. 4 2004 447 450
-
(2004)
Nano Lett.
, vol.4
, pp. 447-450
-
-
Javey, A.1
Guo, J.2
Farmer, D.B.3
Wang, Q.4
Wang, D.5
Gordon, R.G.6
Lundstrom, M.7
Dai, H.8
-
12
-
-
0042991275
-
Ballistic carbon nanotube field-effect transistors
-
A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai Ballistic carbon nanotube field-effect transistors Nature 424 2003 654 657
-
(2003)
Nature
, vol.424
, pp. 654-657
-
-
Javey, A.1
Guo, J.2
Wang, Q.3
Lundstrom, M.4
Dai, H.5
-
13
-
-
77950300764
-
Numerical study of lightly doped drain and source carbon nanotube field effect transistors
-
R. Yousefi, K. Saghafi, and M.K. Moravvej-Farshi Numerical study of lightly doped drain and source carbon nanotube field effect transistors IEEE Trans. Electron Devices 57 2010 765 771
-
(2010)
IEEE Trans. Electron Devices
, vol.57
, pp. 765-771
-
-
Yousefi, R.1
Saghafi, K.2
Moravvej-Farshi, M.K.3
-
14
-
-
64949144395
-
Novel attributes in the performance and scaling effects of carbon nanotube field-effect transistors with halo doping
-
Z. Arefinia, and Ali A. Orouji Novel attributes in the performance and scaling effects of carbon nanotube field-effect transistors with halo doping Superlattices Microstruct. 45 2009 535 546
-
(2009)
Superlattices Microstruct.
, vol.45
, pp. 535-546
-
-
Arefinia, Z.1
Orouji, A.A.2
-
15
-
-
42749085843
-
Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts
-
I. Hassaninia, M.H. Sheikhi, and Z. Kordrostami Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts Solid State Electron. 52 2008 980 985
-
(2008)
Solid State Electron.
, vol.52
, pp. 980-985
-
-
Hassaninia, I.1
Sheikhi, M.H.2
Kordrostami, Z.3
-
16
-
-
70249133993
-
Investigation of the performance and band-to-band tunneling effect of a new double-halo-doping carbon nanotube field-effect transistor
-
Z. Arefinia Investigation of the performance and band-to-band tunneling effect of a new double-halo-doping carbon nanotube field-effect transistor Physica E 41 2009 1767 1771
-
(2009)
Physica e
, vol.41
, pp. 1767-1771
-
-
Arefinia, Z.1
-
17
-
-
55249096662
-
Impact of single halo implantation on the carbon nanotube field-effect transistor: A quantum simulation study
-
Z. Arefinia, and A.A. Orouji Impact of single halo implantation on the carbon nanotube field-effect transistor: A quantum simulation study Physica E 41 2008 196 201
-
(2008)
Physica e
, vol.41
, pp. 196-201
-
-
Arefinia, Z.1
Orouji, A.A.2
-
18
-
-
0347763790
-
Electrostatic engineering of nanotube transistors for improved performance
-
S. Heinze, J. Tersoff, and P. Avouris Electrostatic engineering of nanotube transistors for improved performance Appl. Phys. Lett. 83 2003
-
(2003)
Appl. Phys. Lett.
, vol.83
-
-
Heinze, S.1
Tersoff, J.2
Avouris, P.3
-
20
-
-
0442311241
-
A numerical study of scaling issues for Schottky barrier carbon nanotube transistors
-
J. Guo, S. Datta, and M. Lundstrom A numerical study of scaling issues for Schottky barrier carbon nanotube transistors IEEE Trans. Electron Devices 51 2004
-
(2004)
IEEE Trans. Electron Devices
, vol.51
-
-
Guo, J.1
Datta, S.2
Lundstrom, M.3
-
21
-
-
0034291813
-
Nanoscale device modeling: The Green's function method
-
S. Datt Nanoscale device modeling: The Green's function method Superlattices Microstruct. 28 2000 253 278
-
(2000)
Superlattices Microstruct.
, vol.28
, pp. 253-278
-
-
Datt, S.1
-
24
-
-
26244453976
-
Towards multiscale modeling of carbon nanotube transistors
-
N. Aluru (Ed.) (special issue)
-
J. Guo, S. Datta, M.S. Lundstrom and M.P. Anantram, Towards multiscale modeling of carbon nanotube transistors, in: N. Aluru (Ed.), Multiscale Methods for Emerging Technologies, Int. J. Multiscale Comput. Eng. 2 (2004) 257-276 (special issue). Available from < https://www.nanohub.org/resources/1818/ >.
-
(2004)
Multiscale Methods for Emerging Technologies, Int. J. Multiscale Comput. Eng.
, vol.2
, pp. 257-276
-
-
Guo, J.1
Datta, S.2
Lundstrom, M.S.3
Anantram, M.P.4
-
25
-
-
29144445274
-
Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors
-
S.O. Koswatta, M.S. Lundstrom, M.P. Anantram, and D.E. Nikonov Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors Appl. Phys. Lett. 87 2005
-
(2005)
Appl. Phys. Lett.
, vol.87
-
-
Koswatta, S.O.1
Lundstrom, M.S.2
Anantram, M.P.3
Nikonov, D.E.4
-
27
-
-
0001597428
-
Schottky barrier heights and the continuum of gap states
-
J. Tersoff Schottky barrier heights and the continuum of gap states Phys. Rev. Lett. 52 1984 465 568
-
(1984)
Phys. Rev. Lett.
, vol.52
, pp. 465-568
-
-
Tersoff, J.1
-
28
-
-
79958850425
-
Accurate six-band nearest-neighbor tight-binding model for the p-bands of bulk graphene and graphene nanoribbons
-
T.B. Boykin, M. Luisier, G. Klimeck, X. Jiang, N. Kharche, Y. Zhou, and S.K. Nayak Accurate six-band nearest-neighbor tight-binding model for the p-bands of bulk graphene and graphene nanoribbons J. Appl. Phys. 109 2011
-
(2011)
J. Appl. Phys.
, vol.109
-
-
Boykin, T.B.1
Luisier, M.2
Klimeck, G.3
Jiang, X.4
Kharche, N.5
Zhou, Y.6
Nayak, S.K.7
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