p-Channel, n-Channel and ambipolar field-effect transistors based on functionalized carbon nanotube networks

Superlattices and Microstructures

Volumn 46, Issue 1-2, 2009, Pages 347-356

  Goh, Roland G S ^a,b   Bell, John M ^a   Motta, Nunzio ^a   Ho, Peter K H ^b   Waclawik, Eric R ^a  

^a QUEENSLAND UNIVERSITY OF TECHNOLOGY   (Australia)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Atomic force microscopy; Carbon nanotube network field effect transistors; Carbon nanotubes; Single walled carbon nanotubes

Indexed keywords

ACTIVE AREA; AMBIPOLAR FIELD; CARBON NANOTUBE NETWORK; CARBON NANOTUBE NETWORK FIELD-EFFECT TRANSISTORS; ELECTRONIC TRANSFERS; FIELD-EFFECT MOBILITIES; FUNCTIONALIZED; FUNCTIONALIZED CARBON NANOTUBES; MEAN DIAMETER; N-CHANNEL; OCTADECYLAMINE; ON/OFF RATIO; OXIDATIVE CUTTING; SPIN CASTING; TUBE ENDS;

ATOMIC FORCE MICROSCOPY; ATOMS; CENTRIFUGATION; FIELD EFFECT TRANSISTORS; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSPORT PROPERTIES;

CARBON NANOTUBES;

EID: 67249089499     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.12.027     Document Type: Article

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