Numerical study of lightly doped drain and source carbon nanotube field effect transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 4, 2010, Pages 765-771

  Yousefi, Reza ^a   Saghafi, Kamyar ^b   Moravvej Farshi, Mohammad Kazem ^c  

^a ISLAMIC AZAD UNIVERSITY   (Iran)

^b SHAHED UNIVERSITY   (Iran)

^c TARBIAT MODARES UNIVERSITY   (Iran)

Author keywords

Band to band tunneling (BTBT); Carbon nanotube; Lightly doped drain and source (LDDS); Nonequilibrium Green's function (NEGF)

Indexed keywords

AMBIPOLAR CHARACTERISTICS; BAND TO BAND TUNNELING; BAND-TO-BAND TUNNELING (BTBT); CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CHANNEL LENGTH; GATE VOLTAGES; HEAVILY DOPED; INTRINSIC CHANNEL; LIGHTLY DOPED DRAINS; METAL ELECTRODES; MOS-FET; NON-EQUILIBRIUM GREEN'S FUNCTION; NUMERICAL STUDIES; ON CURRENTS; ON-OFF RATIO; POWER-DELAY PRODUCTS; SCHOTTKY BARRIERS; SHORTER DELAYS; SIMPLE MODIFICATIONS; SOURCE AND DRAINS; SOURCE REGION; SOURCE/DRAIN REGIONS; TUNNELING LEAKAGE CURRENT;

CARBON NANOTUBES; DRAIN CURRENT; GREEN'S FUNCTION; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; TRANSPORT PROPERTIES; TUNNELING (EXCAVATION); WIND TUNNELS;

FIELD EFFECT TRANSISTORS;

EID: 77950300764     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2041282     Document Type: Article

References (19)

1. S. Ijima, "Helical microtubules of graphitic carbon," Nature, vol.354, no.6348, pp. 56-58, Nov. 1991.
2. F. Léonard and J. Tersoff, "Multiple functionality in nanotube transistors," Phys. Rev. Lett., vol.88, no.25, pp. 258 302-258 305, Jun. 2002.
3. J. Guo, S. Datta, and M. Lundstrom, "A numerical study of scaling issues for Schottky-Barrier carbon nanotube transistors," IEEE Trans. Electron Devices, vol.51, no.2, pp. 172-177, Feb. 2004.
4. Y. M. Lin, J. Appenzeller, J. Knoch, and P. Avouris, "High performance carbon nanotube field-effect transistor with tunable polarities," IEEE Trans. Nanotechnol., vol.4, no.5, pp. 481-489, Sep. 2005.
5. J. Guo and M. Lundstrom, "Device simulation of SWNT-FETs," in Carbon Nanotube Electronics. New York: Springer-Verlag, 2009, ch. 5, pp. 107-132.
6. S. Heinze, J. Tersoff, and P. Avouris, "Electrostatic engineering of nanotube transistors for improved performance," Appl. Phys. Lett., vol.83, no.24, pp. 5038-5040, Dec. 2003.
7. O. Siyuranga, S. Koswatta, D. Nikonov, and M. Lundstrom, "Computational study of carbon nanotube p-i-n tunnel FETs," in IEDM Tech. Dig., 2005, pp. 518-521.
8. I. Hassaninia, M. H. Sheikhi, and Z. Kordrostami, "Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts," Solid State Electron., vol.52, no.6, pp. 980-985, Jun. 2008.
9. J. Li and Q. Zhang, "Simulation of ambipolar-to-unipolar conversion of carbon nanotube based field effect transistors," Nanotechnology, vol.16, no.8, pp. 1415-1418, Aug. 2005.
10. J. Guo, S. Datta, M. Lundstrom, and M. P. Anantram, "Toward multi-scale simulations of carbon nanotube transistors," Int. J. Multiscale Comput. Eng., vol.2, pp. 257-276, 2004.
11. J. Guo, S. Datta, M. P. Anantram, and M. Lundstrom, "Atomistic simulation of carbon nanotube field-effect transistors using non-equilibrium Green's function formalism," J. Comput. Electron., vol. 3, no. 3/4, pp. 373-377, Oct. 2004.
12. S. Datta, Electronic Transport inMesoscopic Systems. Cambridge, U.K.: Cambridge Univ. Press, 1995.
13. K. M. Indlekofer, J. Knoch, and J. Appenzeller, "Understanding Coulomb effects in nanoscale Schottky-Barrier-FETs," IEEE Trans. Electron Devices, vol.54, no.6, pp. 1502-1509, Jun. 2007.
14. International Technology Roadmap for Semiconductors ITRS, 2005.
15. Y. Yoon and J. Guo, "Analysis of strain effects in ballistic carbon nanotube FETs," IEEE Trans. Electron Devices, vol.54, no.6, pp. 1280-1287, Jun. 2007.
16. R. Venugopal, Z. Ren, S. Datta, M. S. Lundstrom, and D. Jovanovic, "Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches," J. Appl. Phys., vol.92, no.7, pp. 3730-3739, Oct. 2002.
17. A. Javey, R. Tu, D. Farmer, J. Guo, R. Gordon, and H. Dail, "High performance n-type carbon nanotube field-effect transistors with chemically doped contacts," Nano. Lett., vol.5, no.2, pp. 345-348, Feb. 2005.
18. W. J. Zhang, J. Y. Zhang, P. J. Li, X. Shen, Q. F. Zhang, and J. L. Wu, "The effects of contacts and ambipolar electrical transport in nitrogen doped multiwall carbon nanotubes," Nanotechnology, vol.19, no.8, pp. 085 202-085 207, Feb. 2008.
19. J. Guo, A. Javey, H. Dai, and M. Lundstrom, "Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistor," in IEDM Tech. Dig., 2004, pp. 703-706.