LDC-CNTFET: A carbon nanotube field effect transistor with linear doping profile channel

Superlattices and Microstructures

Volumn 50, Issue 2, 2011, Pages 145-156

  Naderi, Ali ^a   Keshavarzi, Parviz ^a   Orouji, Ali A ^a  

^a SEMNAN UNIVERSITY   (Iran)

Author keywords

Carbon nanotube field effect transistor (CNTFET); Channel impurity; Channel length; Linear doping profile; Nonequilibrium Green's function (NEGF); Short channel effects

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CHANNEL IMPURITY; CHANNEL LENGTH; LINEAR DOPING PROFILES; NON-EQUILIBRIUM GREEN'S FUNCTION; SHORT-CHANNEL EFFECT;

CARBON NANOTUBES; DRAIN CURRENT; GREEN'S FUNCTION;

FIELD EFFECT TRANSISTORS;

EID: 79960379226     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2011.05.011     Document Type: Article

References (25)

1. International Technology Roadmap for Semiconductors, 2007 ed., .
2. S. Tans, A. Verschueren, and C. Dekker Room-temperature transistor based on a single carbon nanotube Nature (London) 393 1998 49 51
3. Z.Y. Zhang, S. Wang, L. Ding, X.L. Liang, H.L. Xu, J. Shen, Q. Chen, R.L. Cui, Y. Li, and L.M. Peng High performance n-type carbon nanotube field-effect transistors with estimated sub-10-ps gate delay Appl. Phys. Lett. 92 2008 133117-1 133117-3
4. P. Avouris, J. Appenzeller, R. Martel, and S. Wind Carbon nanotube electronics Proc. IEEE 91 2003 1772 1784
5. P. Avouris, A. Afzali, J. Appenzeller, J. Chen, M. Freitag, C. Klinke, Y.-M. Lin, and J.C. Tang Carbon nanotube electronics and optoelectronics IEDM Tech. Dig. 2004 525 529 (Pubitemid 40928345)
6. R. Martel, H.-S.P. Wong, K. Chan, and P. Avouris Carbon nanotube field effect transistors for logic applications IEDM Tech. Dig. 2001 159 162 (Pubitemid 34166707)
7. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai Ballistic carbon nanotube field-effect transistors Nature 424 2003 654 657 (Pubitemid 36987985)
8. A. Hazeghi, T. Krishnamohan, and H.-S. Philip Wong Schottky-barrier carbon nanotube field-effect transistor modeling IEEE Trans. Electron Dev. 54 2007 439 445 (Pubitemid 46502196)
9. J. Appenzeller, Y.-M. Lin, J. Knoch, and Ph. Avouris Band-to-band tunneling in carbon nanotube field-effect transistors Phys. Rev. Lett. 93 2004 196805-1 196805-4
10. A. Javey, J. Guo, D.B. Farmer, Q. Wang, D. Wang, R.G. Gordon, M. Lundstrom, and H. Dai Carbon nanotube field-effect transistors with integrated Ohmic contacts and high-k gate dielectrics Nano Lett. 4 2004 447 450 (Pubitemid 38402631)
11. S.O. Koswatta, M.S. Lundstrom, M.P. Anantram, and D.E. Nikonov Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors Appl. Phys. Lett. 87 2005 253107-1 253107-3
12. I. Hassaninia, M.H. Sheikhi, and Z. Kordrostami Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts Solid State Electron. 52 2008 980 985
13. R. Yousefi, K. Saghafi, and M.K. Moravvej-Farshi Numerical study of lightly doped drain and source carbon nanotube field effect transistors IEEE Trans. Electron Dev. 57 2010 765 771
14. Z. Arefinia, and A.A. Orouji Impact of single halo implantation on the carbon nanotube field-effect transistor: a quantum simulation study Phys. E Low Dimen. Syst. Nanostruct. 41 2008 196 201
15. Z. Arefinia, and Ali A. Orouji Novel attributes in the performance and scaling effects of carbon nanotube field-effect transistors with halo doping Superlattices Microstruct. 45 2009 535 546
16. Z. Arefinia Investigation of the performance and band-to-band tunneling effect of a new double-halo-doping carbon nanotube field-effect transistor Phys. E Low Dimen. Syst. Nanostruct. 41 2009 1767 1771
17. J. Guo, S. Datta, and M. Lundstrom A numerical study of scaling issues for Schottky barrier carbon nanotube transistors IEEE Trans. Electron Dev. 51 2004 172 177
18. J. Guo, S. Datta, M. Lundstrom, and M.P. Anantram Toward multi-scale simulations of carbon nanotube transistors Int. J. Multiscale Comput. Eng. 2 2004 257 276
19. S. Datta Quantum Transport: Atom to Transistor 2005 Cambridge University Press Cambridge, UK
20. S.O. Koswatta, D.E. Nikonov, and M.S. Lundstrom Computational study of carbon nanotube p-i-n tunnel FETs IEDM Tech. Dig. 2005 518 521 (Pubitemid 46370903)
21. A.A. Orouji, and Z. Arefinia Detailed simulation study of a dual material gate carbon nanotube field-effect transistor Phys. E Low Dimen. Syst. Nanostruct. 41 2009 552 557
22. A.A. Orouji, and S.A. Ahmadmiri Novel attributes and design considerations of source and drain regions in carbon nanotube transistors Phys. E Low Dimen. Syst. Nanostruct. 42 2010 1456 1462
23. S. Datta Electronic Transport in Mesoscopic Systems 1995 Cambridge University Press Cambridge, UK
24. R. Saito, G. Dresselhaus, and M.S. Dresselhaus Physical Property of Carbon Nanotubes 1998 Imperial College Press London, UK
25. G.V. Reddy, and M.J. Kumar Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study Microelectron. J. 35 2004 761 765