Schottky-barrier carbon nanotube field-effect transistor modeling

IEEE Transactions on Electron Devices

Volumn 54, Issue 3, 2007, Pages 439-445

  Hazeghi, Arash ^a   Krishnamohan, Tejas ^a,b   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Ballistic transport; Carbon nanotube; CNFET; Compact model; Evanescent mode analysis; Field effect transistor; Mesoscopic scatterer; Modeling; Nanoelectronics; Schottky barrier; Simulation

Indexed keywords

CARBON NANOTUBES; CHARGE CARRIERS; COMPUTER SIMULATION; DRAIN CURRENT; ELECTRIC CURRENTS; NANOELECTRONICS;

BALLISTIC MODEL; CARBON NANOTUBES FIELD-EFFECT TRANSISTOR; SCHOTTKY-BARRIER;

FIELD EFFECT TRANSISTORS;

EID: 33947620020     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.890384     Document Type: Article

References (20)

1. International Technology Roadmap for Semiconductors, ITRS. (2005). [Online]. Available: Public.itrs.org.
2. P. Avouris, J. Appenzeller, R. Martel, and S. Wind, "Carbon nanotube electronics," Proc. IEEE, vol. 91, no. 11, pp. 1772-1784, Nov. 2003.
3. P. Avouris, A. Afzali, J. Appenzeller, J. Chen, M. Freitag, C. Klinke, Y-M. Lin, and J. C. Tang, "Carbon nanotube electronics and optoelectronics," in IEDM Tech. Dig., 2004, pp. 525-529.
4. R. Martel, H.-S. P. Wong, K. Chan, and P. Avouris, "Carbon nanotube field effect transistors for logic applications," in IEDM Tech. Dig., 2001, pp. 159-162.
5. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, "Ballistic carbon nanotube field-effect transistors," Nature, vol. 424, no. 6949, p. 654, Aug. 2003.
6. A. Javey, R. Tu, D. B. Farmer, J. Guo, R. G. Gordon, and H. Dai, "High performance n-type carbon nanotube field-effect transistors with chemically doped contacts," Nano Lett., vol. 5, no. 2, pp. 345-348, Feb. 2005.
7. Y. M. Lin, J. Appenzeller, and P. Avouris, "High-performance carbon nanotube field-effect transistor with tunable polarities," IEEE Trans. Nanotechnol., vol. 4, no. 5, pp. 481-489, Sep. 2005.
8. M. Radosavljevic, J. Appenzeller, and P. Avouris, "High performance of potassium n-doped carbon nanotube field-effect transistors," Appl. Phys. Lett., vol. 84, no. 18, pp. 3693-3695, May 2004.
9. K. Natori, Y. Kimura, and T. Shimizu, "Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor," J. Appl. Phys., vol. 97, no. 3, pp. 34306-1-34306-7, Feb. 2005.
10. S.-H. Oh, D. Monroe, and J. M. Hergenrother, "Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs," IEEE Electron Device Lett., vol. 21, no. 9, pp. 445-447, Sep. 2000.
11. J. W. Mintmire and C. T. White, "Universal density of states for carbon nanotubes," Phys. Rev. Lett., vol. 81, no. 12, pp. 2506-2509, Sep. 1998.
12. J. Appenzeller, M. Radosavljevic, J. Knoch, and P. Avouris, "Tunneling versus thermionic emission in one-dimensional semiconductors," Phys. Rev. Lett., vol. 92, no. 4, pp. 48301.1-48301.4, Jan. 2004.
13. S. Datta, Electronic Transport in Mesoscopic Systems. Cambridge, U.K.: Cambridge Univ. Press, 1995.
14. F. Leonard and J. Tersoff, "Role of fermi-level pinning in nanotube Schottky diodes," Phys. Rev. Lett., vol. 84, no. 20, pp. 4693-4696, May 2000.
15. W. Kim, A. Javey, R. Tu, J. Cao, Q. Wang, and H. Dai, "Electrical contacts to carbon nanotubes down to 1 nm in diameter," Appl. Phys. Lett., vol. 87, no. 17, p. 173101, Oct. 2005.
16. R. Saito, G. Dresselhaus, and M. S. Dresselhaus, Physical Properties of Carbon Nanotubes. London, U.K.: Imperial College Press, 1998.
17. J. Guo, M. Lundstrom, and S. Data, "Performance projections for ballistic carbon nanotube field-effect transistors," Appl. Phys. Lett., vol. 80, no. 17, pp. 3192-3194, Apr. 2002.
18. J. Guo, S. Datta, and M. Lundstorm, "A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors," IEEE Trans. Electron Devices, vol. 51, no. 2, pp. 172-177, Feb. 2004.
19. A. Raychowdhury, S. Mukhopadhyay, and K. Roy, "A circuit-compatible model of ballistic carbon nanotube field-effect transistors," IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., vol. 23, no. 10, pp. 1411-1420, Oct. 2004.
20. J. Deng and H.-S. Philip Wong, "A circuit-compatible SPICE model for enhancement mode carbon nanotube field effect transistors," in Proc. SISPAD, Sep. 2006, pp. 166-169.