Enhancement-mode nanowire (nanobelt) field-effect-transistors with Schottky-contact source and drain electrodes

Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

  Yu, Bin ^a   Ye, Yu ^a   Wu, Peicai ^a   Dai, Yu ^a   Zhang, Hui ^a   Dai, Lun ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE CHANNELS; DEVICE STRUCTURES; DIVERSE APPLICATIONS; ENHANCEMENT-MODE; HIGH-SPEED; LOW-POWER CONSUMPTION; SCHOTTKY CONTACTS; SCHOTTKY-CONTACT; SOURCE AND DRAIN ELECTRODES; TOP GATE; WORKING PRINCIPLES;

ELECTRODES; NANOBELTS; NANOWIRES;

MESFET DEVICES;

EID: 84859806556     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3701276     Document Type: Article

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