Enhancement-mode silicon nanowire field-effect transistors on plastic substrates

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Volumn 5, Issue 16, 2009, Pages 1821-1824

  Chung, Eun Ae ^a,b   Koo, Jamin ^a   Lee, Myeongwon ^a   Jeong, Dong Young ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Arrays; Doping; Field effect transistors; Nanowires; Silicon

Indexed keywords

AQUEOUS SOLUTIONS; ARRAYS; BACK-GATE; DOPING; ENHANCEMENT-MODE; INDUCTIVELY-COUPLED; MASK LAYER; PHOTORESIST MASK; PLASTIC SUBSTRATES; SI SUBSTRATES; SI WAFER; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SUPERIOR MOBILITY; THERMAL OXIDATION; TOP-GATE;

DOPING (ADDITIVES); ELECTRIC WIRE; INDUCTIVELY COUPLED PLASMA; MESFET DEVICES; NANOWIRES; PLASMA APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON OXIDES; SILICON WAFERS; SUBSTRATES;

FIELD EFFECT TRANSISTORS;

METAL NANOPARTICLE; NANOMATERIAL; NANOWIRE; OXYGEN; PLASTIC; SILICON; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; ELECTRONICS; EQUIPMENT DESIGN; HEAT; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR;

ELECTRONICS; EQUIPMENT DESIGN; HOT TEMPERATURE; MATERIALS TESTING; METAL NANOPARTICLES; NANOSTRUCTURES; NANOTECHNOLOGY; NANOWIRES; OXYGEN; PLASTICS; SEMICONDUCTORS; SILICON; SILICON DIOXIDE;

EID: 69049108891     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200900302     Document Type: Article

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