Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors

Nanotechnology

Volumn 17, Issue 11, 2006, Pages

  Kim, Hyeong Jin ^a   Lee, Chul Ho ^a   Kim, Dong Wook ^a   Yi, Gyu Chul ^a,b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRODES; GOLD; NANOSTRUCTURED MATERIALS; SILICON; SUBSTRATES; TRANSCONDUCTANCE; ZINC OXIDE;

BOTTOM-GATE; DUAL-GATE; GEOMETRIC FIELD ENHANCEMENT; NANOROD;

MOSFET DEVICES;

EID: 33744515172     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/11/S16     Document Type: Article

References (25)

1. Yi G-C, Wang C and Park W I 2005 Semicond. Sci. Technol. 20 S22
2. zgür, Alivov Ya I, Liu C, Teke A, Reshchikov M A, Dogan S, Avrutin V, Cho S-J and Morkoç H 2005 J. Appl. Phys. 98 041301
3. Huang M, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R and Yang P 2001 Science 292 1897
4. Park W I and Yi G-C 2004 Adv. Mater. 16 87
5. Park W I, Kim J S, Yi G-C and Lee H J 2005 Adv. Mater. 17 1393
6. Arnold M S, Avouris P, Pan Z W and Wang Z L 2003 J. Phys. Chem. B 107 659
7. Goldberger J, Sirbuly D J, Law M and Yang P 2005 J. Phys. Chem. B 109 9
8. Park W I, Kim J S, Yi G-C, Bae M H and Lee H-J 2004 Appl. Phys. Lett. 85 5052
9. Heo Y W, Tien L C, Kwon Y, Norton D P, Pearton S J, Kang BS and Ren F 2004 Appl. Phys. Lett. 85 2274
10. Ahn S E, Lee J S, Kim H, Kim S, Kang B H, Kim K H and Kim G T 2004 Appl. Phys. Lett. 84 5022
11. Fan Z, Chang P-C, Lu J G, Walter E C, Penner R M, Lin C-H and Lee H P 2004 Appl. Phys. Lett. 85 6128
12. Kumar S, Gupta V and Sreenivas K 2005 Nanotechnology 16 1167
13. Wan Q, Li H, Chen Y J, Wang T H, He X L, Li J P and Lin CL 2004 Appl. Phys. Lett. 84 3654
14. Wind S J, Appenzeller J, Martel R, Derycke V and Avouris P 2002 J. Vac. Sci. Technol. B 20 2798
15. Javey A, Guo J, Farmer D B, Wang Q, Wang D, Gordon RG, Lundstrom M and Dai H 2004 Nano Lett. 4 447
16. Koo S-M, Li Q, Edelstein M D, Richter C A and Vogel EM 2005 Nano. Lett. 5 2519
17. Kim B-K, Kim J-J, Lee J-O, Kong K-J, Seo H J and Lee CJ 2005 Phys. Rev. B 71 153313
18. Park W I, Kim D H, Jung S W and Yi G-C 2002 Appl. Phys. Lett. 80 4232
19. Kwon Y, Li Y, Heo Y W, Jones M, Holloway P H, Norton D P, Park Z V and Li S 2004 Appl. Phys. Lett. 84 2685
20. Wang D, Wang Q, Javey A, Tu R, Dai H, Kim H, Mclntyre P C, Krishnamohan T and Sarawat K C 2003 Appl. Phys. Lett. 83 2432
21. Cui Y, Zhong Z, Wang D, Wang W U and Lieber C M 2003 Nano Lett. 3 149
22. Huang Y, Duan X, Cui Y and Lieber C M 2002 Nano Lett. 2 101
23. Sze M 1981 Physics of Semiconductor Devices (New York: Wiley) chapter 8
24. Calarco R, Marso M, Richter T, Aykanat A I, Meijers R, Hart A, Stoica T and Lüth H 2005 Nano Lett. 5 981
25. Heinze S, Tersoff J, Martel R, Derycke V, Appenzeller J and Avouris P 2002 Phys. Rev. Lett. 89 106801