Magneto-transport properties of exfoliated graphene on GaAs

Journal of Applied Physics

Volumn 110, Issue 4, 2011, Pages

  Woszczyna, Mirosaw ^a   Friedemann, Miriam ^a   Pierz, Klaus ^a   Weimann, Thomas ^a   Ahlers, Franz J ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; DOPED SILICON; GAAS; GAAS SUBSTRATES; II-IV SEMICONDUCTORS; MAGNETO TRANSPORT PROPERTIES; MULTILAYER BARRIERS; QUANTUM HALL EFFECT; RESISTANCE CHARACTERISTICS; WEAK LOCALIZATION EFFECTS;

CARRIER CONCENTRATION; GALLIUM ALLOYS; GALLIUM ARSENIDE; HALL EFFECT; MAGNETIC FIELD EFFECTS; MAGNETOS; MONOLAYERS; MULTILAYERS; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; SILICON OXIDES; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 80052406950     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3624611     Document Type: Article

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