Ge chemical vapor deposition on GaAs for low resistivity contacts

Journal of the Electrochemical Society

Volumn 158, Issue 3, 2011, Pages

  Vincent, B ^a   Firrincieli, A ^a,b   Wang, W E ^a   Waldron, N ^a   Franquet, A ^a   Douhard, B ^a   Vandervorst, W ^a,c   Clarysse, T ^a   Brammertz, G ^a   Loo, R ^a   Dekoster, J ^a   Meuris, M ^a   Caymax, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; DOPANT CONCENTRATIONS; GAAS; GAAS SUBSTRATES; GROWTH YIELD; HIGH QUALITY; IN-SITU; LOW RESISTIVITY; METAL OXIDE SEMICONDUCTOR STRUCTURE; SELECTIVE GROWTH;

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GALLIUM ARSENIDE; GERMANIUM; METALLIC COMPOUNDS; MONOLAYERS; MOS DEVICES; NICKEL COMPOUNDS; OHMIC CONTACTS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GALLIUM ALLOYS;

EID: 79551601637     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3528273     Document Type: Article

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