In-situ phosphorus doping of germanium by APCVD

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 599-609

  Dilliway, G D ^a,d   Van Den Boom, R ^a,b   Van Daele, B ^a   Leys, F E ^a   Clarysse, T ^a   Parmentier, B ^a   Moussa, A ^a   Defranoux, C ^c   Benedetti, A ^a   Richard, O ^a   Bender, H ^a   Simoen, E ^a   Meuris, M ^a  

^a IMEC   (Belgium)

^b FONTYS UNIVERSITY OF APPLIED SCIENCES   (Netherlands)

^c SOPRA   (France)

^d UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DOPING (ADDITIVES); FLOW OF FLUIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; PHOSPHORUS; TRANSMISSION ELECTRON MICROSCOPY;

ATMOSPHERIC CHEMICAL VAPOR DEPOSITION; CRYSTALLINE QUALITY; GAS FLOW CONDITIONS; GROWTH TEMPERATURE; PHOSPHINE;

SEMICONDUCTING GERMANIUM;

EID: 33846948653     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355857     Document Type: Conference Paper

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