Fast flexible electronics using transferrable silicon nanomembranes

Journal of Physics D: Applied Physics

Volumn 45, Issue 14, 2012, Pages

  Zhang, Kan ^a   Seo, Jung Hun ^a   Zhou, Weidong ^b   Ma, Zhenqiang ^a  

^a University of Wisconsin Madison   (United States)

^b The University of Texas at Arlington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE FABRICATIONS; DEVICE PERFORMANCE; DOPING TECHNIQUES; FLEXIBLE CIRCUIT; FLEXIBLE DEVICE; FLEXIBLE SUBSTRATE; FUTURE RESEARCH DIRECTIONS; HIGH FREQUENCY HF; IMPLANTATION ENERGIES; ION IMPLANTATION ENERGY; MATERIAL PREPARATION; NANOMEMBRANES; PERFORMANCE ENHANCEMENTS; PROCESS INTEGRATION; PROCESSING TECHNIQUE; PROCESSING TEMPERATURE; RADIO FREQUENCIES; RF INDUCTORS; RF SWITCH; RF-CIRCUITS; SELECTIVE DOPING; SHEET RESISTIVITY; SILICON ON INSULATOR; STRUCTURE INNOVATION; SYSTEMATIC REVIEW; THIN FILM TRANSISTORS (TFT); VALUABLE COMPONENT;

FLEXIBLE ELECTRONICS; ION IMPLANTATION; NANOSTRUCTURES; PROCESSING; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILM TRANSISTORS;

MONOCRYSTALLINE SILICON;

EID: 84858968491     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/14/143001     Document Type: Review

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