Design and fabrication of high-performance polycrystalline silicon thin-film transistor circuits on flexible steel foils

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 815-822

  Afentakis, Themistokles ^a,b   Hatalis, Miltiadis ^a   Voutsas, Apostolos T ^b   Hartzell, John ^b  

^a Lehigh University   (United States)

^b SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

CMOS devices; CMOS digital integrated circuits; Thin film circuits; Thin film transistors (TFTs)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; EXCIMER LASERS; METAL FOIL; SEMICONDUCTOR LASERS; STEEL; THIN FILM TRANSISTORS;

EXCIMER LASER CRYSTALLIZATION; GATE INSULATOR; HIGH-PERFORMANCE POLYCRSTALLINE SILICON THIN-FILM TRANSISTOR CIRCUITS; STEEL FOILS; THIN-FILM CIRCUITS;

POLYSILICON;

EID: 33645795005     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.871174     Document Type: Article

References (24)

1. P. K. Weimer, "The TFT - A new thin-film transistor," Proc. IRE, vol. 50, no. 6, pp. 1462-1469, 1962.
2. T. P. Brody, "The thin-film transistor - A late flowering boom," IEEE Trans. Electron Devices, vol. ED-31, no. 11, pp. 1614-1628, Nov. 1984.
3. P. A. Penz, K. Surtani, W. Wen, M. R. Johnson, D. Kane, L. Sanders, B. Culley, and J. Fish, "Plastic substrate LCD," in Proc. SID, 1981, vol. XII, pp. 116-117.
4. J. Kim, V. Vorflusev, and S. Kumar, "Flexible displays prepared using phase separated composite organic films of liquid crystals," in Proc. SID, 1999, pp. 880-885.
5. P. M. Smith, P. G. Carey, and T. W. Sigmon, "Excimer laser crystallization and doping of silicon films on plastic substrates," Appl. Phys. Lett., vol. 70, no. 3, pp. 342-344, Jan. 1997.
6. A. Schwarzmann, "Performance of the porcelain-metal substrate at microwaves," IEEE Trans. Comp., Hybrids, Manufact. Technol., vol. CHMT-2, no. 4, pp. 451-453, Dec. 1979.
7. S. D. Theiss and S. Wagner, "Amorphous silicon thin-film transistors on steel foil substrates," IEEE Electron Device Lett., vol. 17, no. 12, pp. 578-580, Dec. 1996.
8. C. C. Wu, S. D. Theiss, M. H. Gu, M. Lu, J. C. Sturm, S. Wagner, and S. R. Forrest, "Integration of organic LEDs and amorphous Si TFTs onto flexible and lightweight metal foil substrates," IEEE Electron Device Lett., vol. 18, no. 12, pp. 609-612, Dec. 1997.
9. T. Serikawa and F. Omata, "High-mobility poly-Si TFTs fabricated on flexible stainless steel substrates," IEEE Electron Device Lett., vol. 20, no. 11, pp. 574-576, Nov. 1999.
10. M. Wu, K. Pangal, J. C. Sturm, and S. Wagner, "High electron mobility polycrystalline silicon thin-film transistors on steel foil substrates," Appl. Phys. Lett., vol. 75, no. 15, pp. 2244-2246, Oct. 1999.
11. R. Howell, M. Stewart, S. Karnik, S. Saha, and M. Hatalis, "Poly-Si thin-film transistors on steel substrates," IEEE Electron Device Lett., vol. 21, no. 2, pp. 70-72, Feb. 2000.
12. M. Stewart, T. Afentakis, G. Sarcona, and M. Hatalis, "Low-temperature flat panel display driver circuits in RTP crystallized polysilicon," in Proc. SID, 1999, vol. 31, p. 462.
13. T. Afentakis, M. Hatalis, T. Voutsas, and J. Hartzell, "High performance polysilicon circuits on thin metal foils," Proc. SPIE, vol. 5004, pp. 122-126, 2003.
14. Y. Chen, J. Au, P. Kazlas, A. Ritenour, H. Gates, and J. Goodman, "Ultra-thin, high-resolution, flexible electronic ink displays addressed by a-Si active-matrix TFT backplanes on stainless steel foil," in IEDM Tech. Dig., 2002, pp. 389-392.
15. 2," Appl. Phys. Lett., vol. 69, no. 19, pp. 2864-2866, Nov. 1996.
16. A. Voutsas, A. Limanov, and J. S. Im, "Effect of process parameters on the structural characteristics of laterally-grown, laser annealed polycrystalline silicon films," J. Appl. Phys., vol. 94, no. 12, pp. 7445-7452, Dec. 2003.
17. K. Kato, T. Wada, N. Kakuda, and T. Kawada, "Hillock-free aluminum-based alloy interconnections for active-matrix liquid-crystal displays," IEICE Trans. Electron., vol. E80-C, no. 2, pp. 320-326, 1997.
18. D. McCulloch and S. Brotherton, "Surface roughness effects in laser-crystallized polycrystalline silicon," Appl. Phys. Lett., vol. 66, no. 16, pp. 2060-2062, Apr. 1995.
19. N. Weste and K. Eshraghian, Principles of CMOS VLSI Design. Reading, MA: Addison-Wesley, 1985, ch. 5.
20. K. Graff, Metal Impurities in Silicon Device Fabrication, 2nd ed. New York: Springer-Verlag, 1999.
21. M. Bakhadyrkhanov and S. Zainabidinov, "Influence of low temperature annealing and the behavior of Nickel atoms in Silicon," Sov. Phys. - Semicond., vol. 12, no. 4, pp. 398-401, 1978.
22. R. N. Ghoshtagore, "Diffusion of nickel in amorphous silicon dioxide and silicon nitride films," J. Appl. Phys., vol. 40, no. 11, pp. 4374-4376, Oct. 1969.
23. N. A. Fedorovich, "Diffusion of cobalt in silicon dioxide films," Sov. Phys. - Solid State, vol. 22, no. 6, pp. 1093-1094, 1980.
24. J. Benton, T. Boone, D. Jacobson, P. Silverman, J. Rosamilia, C. Rafferty, S. Weinzierl, and B. Vu, "Electrical properties of copper and cobalt contamination in processed silicon," J. Electrochem. Soc., vol. 148, no. 6, pp. G326-G329, Jun. 2001.