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Applied Physics Letters

Volumn 86, Issue 25, 2005, Pages 1-3

Dislocation-free strained silicon-on-silicon by in-place bonding

(4) Cohen, G M a Mooney, P M a,b Paruchuri, V K a Hovel, H J a

a IBM T J WATSON RESEARCH CENTER (United States)

b SIMON FRASER UNIVERSITY (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

IN-PLACE BONDING; SILICON FILMS; SILICON-ON-SILICON; TENSILE STRAIN;

ANNEALING; BONDING; DISLOCATIONS (CRYSTALS); HYDROPHOBICITY; LITHOGRAPHY; MOSFET DEVICES; OXIDES; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; STRAIN; TENSILE PROPERTIES;

SILICON;

EID: 23744447252 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1949284 Document Type: Article

Times cited : (35)

References (9)

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