Low-operating-voltage solution-processed InZnO thin-film transistors using high-k SrTa 2O 6

Japanese Journal of Applied Physics

Volumn 51, Issue 3 PART 2, 2012, Pages

  Lu, Li ^a   Miura, Yuta ^a   Nishida, Takashi ^a,b   Echizen, Masahiro ^a   Ishikawa, Yasuaki ^a,b   Uchiyama, Kiyoshi ^c   Uraoka, Yukiharu ^a,b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TSURUOKA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; GATE INSULATOR; HIGH DIELECTRIC CONSTANTS; IMPURITIES IN; LOW THRESHOLD VOLTAGE; LOW VOLTAGES; ON/OFF CURRENT RATIO; SATURATION MOBILITY; SMOOTH SURFACE; SOLUTION PROCESS; SOLUTION-PROCESSED; SUBTHRESHOLD SWING; THIN FILM TRANSISTORS (TFT); THIN-FILM TRANSISTOR (TFTS);

THIN FILMS;

THIN FILM TRANSISTORS;

EID: 84858964572     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.03CB05     Document Type: Article

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