Annealing and composition effects of (BaxSr1-x) Ta2O6 thin films fabricated by sol-gel method

Japanese Journal of Applied Physics

Volumn 49, Issue 9 PART 2, 2010, Pages

  Lu, Li ^a   Nishida, Takashi ^a   Echizen, Masahiro ^a   Uchiyama, Kiyoshi ^a   Uraoka, Yukiharu ^a,b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING ATMOSPHERES; BIAS STABILITY; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTY; HIGH DIELECTRIC CONSTANTS; LOSS TANGENT; LOW LOSS; LOW-LEAKAGE CURRENT; MATERIAL PROPERTY; SOL-GEL METHODS;

ANNEALING; BARIUM; COMPOSITION EFFECTS; ELECTRIC PROPERTIES; PERMITTIVITY; SOL-GEL PROCESS; TANTALUM; VAPOR DEPOSITION;

THIN FILMS;

EID: 78049352791     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.09MA14     Document Type: Conference Paper

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