Effect of interface structure on electrical properties of (Ba,Sr)TiO 3 thin films on glazed alumina substrate

Japanese Journal of Applied Physics

Volumn 47, Issue 9 PART 2, 2008, Pages 7494-7499

  Nozaka, Takashi ^a,b   Mizutani, Yoji ^a   Gun, Bhakdisongkhram ^a   Echizen, Masahiro ^b   Nishida, Takashi ^b   Takeda, Hiroaki ^b   Uchiyama, Kiyoshi ^b   Shiosaki, Tadashi ^b  

^a Yokohama Denshi Seiko Co Ltd   (Japan)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

(Ba0.6Sr0.4)TiO3; BST film; C V property; CSD; Electrical conduction mechanism; Glazed Al2O3 substrate; Leakage current; Schottky barrier

Indexed keywords

ALUMINUM; ANNEALING; BARIUM; CAPACITANCE; CAPACITORS; CERAMIC CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC PROPERTIES; ELECTRIC EQUIPMENT; ELECTRIC PROPERTIES; ELECTROLYTIC CAPACITORS; HEAT CONDUCTION; LEAKAGE CURRENTS; MICROWAVE DEVICES; MICROWAVES; PLATINUM; SCHOTTKY BARRIER DIODES; SUBSTRATES; THICK FILMS; THIN FILM CIRCUITS; THIN FILMS; ELECTRODEPOSITION;

(BA0.6SR0.4)TIO3; BST FILM; C-V PROPERTY; CSD; ELECTRICAL CONDUCTION MECHANISM; GLAZED AL2O3 SUBSTRATE; SCHOTTKY BARRIER;

GOLD;

EID: 55149101108     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7494     Document Type: Article

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