InGaZnO thin-film transistors with YHfZnO gate insulator by solution process

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 7, 2010, Pages 1668-1671

  Kim, Si Joon ^a   Kim, Gun Hee ^a   Kim, Dong Lim ^a   Kim, Doo Na ^a   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

Author keywords

Electrical properties; InGaZnO; Sol gel method; Thin film transistors; YHfZnO

Indexed keywords

2-METHOXYETHANOL; ANNEALING PROCEDURES; CAPACITANCE VOLTAGE; CHANNEL LAYERS; DIELECTRIC CONSTANTS; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; GATE INSULATOR; GATE INSULATOR LAYERS; INDIUM GALLIUM ZINC OXIDES; INGAZNO; LEAKAGE CURRENT MEASUREMENTS; OFF CURRENT; SOL-GEL METHOD; SOLUTION PROCESS; SOLUTION-PROCESSED; SUBTHRESHOLD SWING; YHFZNO; ZINC ACETATE;

CHLORINE COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; GALLIUM; GELS; HAFNIUM; HAFNIUM OXIDES; INDIUM; SOL-GEL PROCESS; SOL-GELS; SOLS; YTTRIUM; YTTRIUM ALLOYS; YTTRIUM OXIDE; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77955625472     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983724     Document Type: Article

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