Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Thin Solid Films

Volumn 519, Issue 10, 2011, Pages 3254-3258

  Yuan, Zijian ^a   Zhu, Xiaming ^a   Wang, Xiong ^a   Cai, Xikun ^a   Zhang, Bingpo ^a   Qiu, Dongjiang ^a   Wu, Huizhen ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Annealing; Indium oxide; Thin film transistors

Indexed keywords

ACTIVE CHANNELS; AIR AMBIENT; AMORPHOUS GLASS; ANNEALING EFFECTS; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; ELECTRON DENSITIES; ELECTRONIC DEVICE; GRAIN SIZE; INDIUM OXIDE; PREFERENTIAL ORIENTATION; ROOM TEMPERATURE; SCATTERING MECHANISMS; STRUCTURAL AND ELECTRICAL PROPERTIES;

AMORPHOUS FILMS; ELECTRIC PROPERTIES; INDIUM; THIN FILM TRANSISTORS; THIN FILMS; VACUUM;

ANNEALING;

EID: 79952316755     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.022     Document Type: Article

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