Conformal doping for FinFETs and precise controllable shallow doping for planar FET manufacturing by a novel B2H6/helium self-regulatory plasma doping process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Sasaki, Y ^a   Okashita, K ^a   Nakamoto, K ^a   Kitaoka, T ^a   Mizuno, B ^a,b   Ogura, M ^b  

^a Ultimate Junction Technologies Inc ^*  (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

32NM NODES; DOPING METHODS; FINFETS; HELIUM GAS; ION IMPLANTS; METAL/HIGH-K GATES; P-MOSFETS; PLASMA DOPING; PLASMA DOPING PROCESS; SHORT-CHANNEL EFFECTS;

ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; HELIUM; MESFET DEVICES; PLASMAS; SEMICONDUCTOR DOPING;

MOSFET DEVICES;

EID: 64549118140     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796850     Document Type: Conference Paper

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