Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars

Nanotechnology

Volumn 23, Issue 11, 2012, Pages

  Kozlowski, G ^a   Zaumseil, P ^a   Schubert, M A ^a   Yamamoto, Y ^a   Bauer, J ^a   Schulli T U ^b   Tillack, B ^a,c   Schroeder, T ^a,d  

^a IHP   (Germany)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; CRYSTAL QUALITIES; EQUILIBRIUM CRYSTAL SHAPES; GE NANOCRYSTALS; GE NANOSTRUCTURES; LOW SURFACE ENERGY; NANOPILLARS; SI(0 0 1); SIZE AND SHAPE; STRUCTURE QUALITY; VOLUME DEFECTS;

CHEMICAL VAPOR DEPOSITION; NANOCRYSTALS; RELAXATION PROCESSES; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GERMANIUM;

EID: 84857828321     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/11/115704     Document Type: Article

References (36)

1. Bardeen J and Brattain W H 1948 Phys. Rev. 74 230
2. Brattain W H and Bardeen J 1948 Phys. Rev. 74 231
3. Flores C, Bollani B, Campesato R, Passoni D and Tim G L 1992 Microelectron. Eng. 18 175
4. Tsaur B Y, Geis M W, Fan J C C and Gale R P 1981 Appl. Phys. Lett. 38 779
5. Yamamoto Y, Zaumseil P, Arguirov T, Kittler M and Tillack B 2011 Solid State Electron. 60 2
6. Feng J, Woo R, Chen S, Liu Y, Griffin P B and Plummer J D 2007 IEEE Electron Device Lett. 28 637
7. Wang G, Rosseel E, Loo R, Favia P, Bender H, Caymax M, Heyns M M and Vandervorst W 2010 Appl. Phys. Lett. 96 111903
8. Liu H, Wang T, Jiang Q, Hogg R, Tutu F, Pozzi F and Seeds A 2011 Nature Photon. 5 416
9. Lim P H, Kobayashi Y, Takita S, Ishikawa Y and Wada K 2008 Appl. Phys. Lett. 93 041103
10. Stepina N P, Koptev E S, Dvurechenskii A V, Nikiforov A I, Gerharz J, Moers J and Gruetzmacher D 2011 Appl. Phys. Lett. 98 142101
11. Liu J, Sun X, Pan D, Wang X, Kimerling L C, Koch T L and Michel J 2007 Opt. Express 15 11272
12. Liu J, Sun X, Camacho-Aguilera R, Kimerling L C and Michel J 2010 Opt. Lett. 35 679
13. Jutzi M, Berroth M, Wohl G, Oehme M and Kasper E 2005 IEEE Photon. Technol. Lett. 17 1510
14. Jaszek R 2001 J. Mater. Sci. Mater. El. 12 1
15. Weimann N G, Eastman L F, Doppalapudi D, Ng H M and Moustakas T D 1998 J. Appl. Phys. 83 3656
16. Farvacque J-L 1996 Mater. Sci. Eng. B 42 110
17. Fitzgerald E A 1991 Mater. Sci. Rep. 7 87
18. Giussani A, Rodenbach P, Zaumseil P, Dabrowski J, Kurps R, Weidner G, Mssig H-J, Storck P, Wollschlger J and Schroeder T 2009 J. Appl. Phys. 105 033512
19. Berbezier I and Ronda A 2009 Surf. Sci. Rep. 64 47
20. Langdo T A, Leitz C W, Currie M T, Fitzgerald E A, Lochtefeld A and Antoniadis D A 2000 Appl. Phys. Lett. 76 3700
21. Fitzgerald E A 1989 J. Vac. Sci. Technol. B 7 782
22. Zaumseil P, Yamamoto Y, Bauer J, Schubert M A and Schroeder T 2011 J. Appl. Phys. 109 023511
23. Kozlowski G, Yamamoto Y, Bauer J, Schubert M A, Dietrich B, Tillack B and Schroeder T 2011 J. Appl. Phys. 110 053509
24. Rcker H et al 2009 IEEE BCTM p 166
25. Kozlowski G, Zaumseil P, Schubert M A, Yamamoto Y, Bauer J, Matejova J, Schulli T, Tillack B and Schroeder T 2011 Appl. Phys. Lett. 99 141901
26. Mller P and Kern R 2000 Appl. Surf. Sci. 162/163 133
27. Stekolnikov A A and Bechstedt F 2005 Phys. Rev. B 72 125326
28. Miracle-Sole S 1995 J. Stat. Phys. 79 183
29. Bricmont J, Fontaine J R and Lebowitz J L 1982 J. Stat. Phys. 29 193
30. Sakai A, Taoka N, Nakatsuka O, Zaima S and Yasuda Y 2005 Appl. Phys. Lett. 86 221916
31. Giussani A, Zaumseil P, Rodenbach P, Weidner G, Schubert M A, Geiger D, Lichte H, Storck P, Wollschlger J and Schroeder T 2009 J. Appl. Phys. 106 073502
32. Hu S M 1991 J. Appl. Phys. 70 R53
33. Renaud G, Gúnard P and Barbier A 1998 Phys. Rev. B 58 7310
34. Richard M-I et al 2011 Phys. Rev. B 84 075314
35. Richard M-I, Metzger T H, Hol V and Nordlund K 2007 Phys. Rev. Lett. 99 225504
36. Zubia D and Hersee S D 1999 J. Appl. Phys. 85 6492