Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis

Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 7, 2011, Pages

  Richard, M I ^a,b   Malachias, A ^c   Rouviere J L ^d   Yoon, T S ^e   Holmstrom E ^f   Xie, Y H ^g   Favre Nicolin, V ^d   Holy V ^h   Nordlund, K ^f   Renaud, G ^d   Metzger, T H ^a  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b AIX MARSEILLE UNIVERSITY   (France)

^c LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

^d UNIV GRENOBLE ALPES   (France)

^e Myong Ji University   (South Korea)

^f UNIVERSITY OF HELSINKI   (Finland)

^g UNIVERSITY OF CALIFORNIA   (United States)

^h CHARLES UNIVERSITY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80052510111     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.075314     Document Type: Article

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