Compliant substrate versus plastic relaxation effects in Ge nanoheteroepitaxy on free-standing Si(001) nanopillars

Applied Physics Letters

Volumn 99, Issue 14, 2011, Pages

  Kozlowski, G ^a   Zaumseil, P ^a   Schubert, M A ^a   Yamamoto, Y ^a   Bauer, J ^a   Matejova, J ^a,b   Schulli, T ^c   Tillack, B ^a,d   Schroeder, T ^a  

^a IHP   (Germany)

^b CHARLES UNIVERSITY   (Czech Republic)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLIANT SUBSTRATES; GE CLUSTER; GE NANOSTRUCTURES; HIGH QUALITY; NANOHETEROEPITAXY; NANOPILLARS; PLASTIC RELAXATION; SI(0 0 1); STRAIN PARTITIONING; STRUCTURAL CHARACTERIZATION; STRUCTURE DIMENSIONS; THEORETICAL VALUES; X-RAY DIFFRACTION STUDIES;

CHEMICAL VAPOR DEPOSITION; GERMANIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON;

EID: 80053961160     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3644948     Document Type: Article

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