High work-function metal gate and high-κ Dielectrics for charge trap flash memory device applications

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2654-2659

  Jeon, Sanghun ^a   Han, Jeong Hee ^a   Lee, Jung Hoon ^a   Choi, Sangmoo ^b   Hwang, Hyunsang ^b   Kim, Chungwoo ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Charge trap Flash (CTF) memory; Electron back tunneling (ETB); Erase; High dielectric; Metal gate; NAND; Work function

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRON TUNNELING; NAND CIRCUITS; OPTIMIZATION; PERMITTIVITY; RELIABILITY;

CHARGE TRAP FLASH (CTF) MEMORY; ELECTRON BACK TUNNELING (ETB); ERASE OPERATION; METAL GATE; WORK FUNCTION;

FLASH MEMORY;

EID: 29244440201     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859691     Document Type: Article

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