Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

Electrochemical and Solid-State Letters

Volumn 12, Issue 6, 2009, Pages

  Wang, Jer Chyi ^a   Lai, Chao Sung ^a   Chen, Yu Kai ^a   Lin, Chih Ting ^a   Liu, Chuan Pu ^b   Huang, Michael R S ^b   Fang, Yu Ching ^c  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BAND GAPS; CHARGE LOSS; DATA ENDURANCES; DOT DENSITIES; ELECTRON DIFFRACTION PATTERNS; GADOLINIUM OXIDES; MEMORY WINDOWS; NANOCRYSTAL MEMORIES; POST DEPOSITIONS; PROGRAM AND ERASE; TRANSMISSION ELECTRON MICROSCOPY IMAGES;

DIFFRACTION; HOLOGRAPHIC INTERFEROMETRY; NANOCRYSTALS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR STORAGE; TRANSMISSION ELECTRON MICROSCOPY; WINDOWS;

GADOLINIUM;

EID: 64549108544     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3109573     Document Type: Article

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