Three-dimensional observation of defects in nitrogen-doped 6H-SiC crystals using a laser scanning confocal microscope

Journal of Materials Science

Volumn 47, Issue 7, 2012, Pages 3429-3434

  Lin, Shenghuang ^a   Chen, Zhiming ^a   Liu, Sujuan ^a   Yang, Ying ^a   Feng, Xianfeng ^a   Ba, Yintu ^a   Yang, Mingchao ^a   Yang, Chen ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTIVE STRUCTURES; ETCH PITS; FORMATION MECHANISM; GROWTH DIRECTIONS; LASER SCANNING CONFOCAL MICROSCOPES; LASER SCANNING CONFOCAL MICROSCOPY; NITROGEN-DOPED; POLYTYPE STABILITY; SCANNING ELECTRON MICROSCOPES; SIC SUBSTRATES; SIDE VIEW; THREE-DIMENSIONAL OBSERVATIONS;

CONFOCAL MICROSCOPY; CRYSTAL DEFECTS; NITROGEN; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS;

THREE DIMENSIONAL;

EID: 84857658560     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-011-6190-4     Document Type: Article

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