High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Huang, X R ^a   Black, D R ^b   MacRander, A T ^a   Maj, J ^a   Chen, Y ^c   Dudley, M ^c  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SILICON CARBIDE; SYNCHROTRONS;

MONOCHROMATIC SYNCHROTRON TOPOGRAPHY; RAY-TRACING SIMULATIONS; SYNCHROTRON DIFFRACTION;

DISLOCATIONS (CRYSTALS);

EID: 36849001230     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2814032     Document Type: Article

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