Thermochemistry of silicon carbide growth by chemical transport reactions

Journal of Materials Science

Volumn 36, Issue 2, 2001, Pages 335-342

  Chaussende, D ^a   Ferro, G ^a   Monteil, Y ^a   Brylinski, C ^b   Bouix, J ^a  

^a UNIVERSITÉ LYON 1   (France)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ETCHING; HALOGEN ELEMENTS; THERMAL GRADIENTS; THERMODYNAMICS;

CHALCOGENS; CHEMICAL TRANSPORT REACTIONS; THERMOCHEMISTRY;

SILICON CARBIDE;

EID: 0035118445     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004808008339     Document Type: Article

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