|
|
Volumn 9, Issue 3-6, 2000, Pages 480-482
|
|
Growth and high temperature performance of semi-insulating silicon carbide
|
|
Author keywords
Doping; Electrical properties; Growth; Semi insulating SiC
|
|
Indexed keywords
ACTIVATION ENERGY;
CRYSTAL GROWTH;
ELECTRIC PROPERTIES;
HIGH TEMPERATURE OPERATIONS;
INSULATING MATERIALS;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
SINGLE CRYSTALS;
VACUUM APPLICATIONS;
VANADIUM;
SILICON NITRIDE;
SILICON CARBIDE;
HIGH TEMPERATURE APPLICATION;
INSULATOR;
SILICON CARBIDE;
VANADIUM;
|
|
EID: 0034124180
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-9635(99)00284-8 Document Type: Conference Paper |
|
Times cited : (21)
|
|
References (8)
|
